RF Power Field Effect Transistor
Description
Freescale Semiconductor Technical Data
Document Number: MRF6P23190H Rev.
2, 3/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz.
Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14 dB Drain Efficiency — 23.
5% IM3 @ 10 MHz Offset — - 37.
5 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel.
R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG.
, 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1.
Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C
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Symbol VDSS VGS Tstg TC TJ CW
Value - 0.
5, +68 - 0.
5, +12 - 65 to +150 150 200 250 1.
3
Unit Vdc Vdc °C °C °C W W/°C
Table 2.
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 100°C, 160 W CW Case Temperature 83°C, 40 W CW Symbol RθJC Value (1,2) 0.
22 0.
24 Unit °C/W
1.
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