HIGH VOLTAGE TRANSISTOR
Description
UNISONIC TECHNOLOGIES CO.
, LTD
MPSA92M
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC(MAX)=625mW * Low collector-Emitter saturation voltage
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MPSA92ML-T92-B
MPSA92MG-T92-B
MPSA92ML-T92-K
MPSA92MG-T92-K
MPSA92ML-T92-R
MPSA92MG-T92-R
Note: Pin Assignment: E:EMITTER B:BASE C:COLLECTOR
Package
TO-92 TO-92 TO-92
Pin Assignment 123 EBC EBC EBC
MPSA92ML-T92-B
(1)Packing Type (2)Package Type
(3)Lead Free
(1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92 (3) Halogen Free, L: Lead Free
Packing
Tape Box Bulk
Tape Reel
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unisonic.
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, Ltd
1 of 2
QW-R201-020.
Ba
MPSA92M
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation (TA=25°C)
PC 625 mW
Collector Current
IC
-800
mA
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC=-1mA, IB=0
Collector-Emitter Breakdown Voltage
BVCES IC=-100μA, VBE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100μA, IC=0
Collector Cut-Off Current
ICBO VCB=-300V, IE=0
Collector Cut-Off Current
ICES VCB=-300V, VBE=0
Emitter Cut-Off Current
IEBO VEB=-4V, IC=0
VCE=-10V, IC=-1mA
DC Current Gain (Note 1)
hFE
VCE=-10V, IC=-10mA VCE=-10V, IC=-100mA
VCE=-10V, IC=-200mA
Collector-...
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