CARRIER DETECTOR AND SWITCHING DIODES
Description
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBD701/D
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
MBD701 MMBD701LT1
Motorola Preferred Devices
These devices are designed primarily for high–efficiency UHF and VHF detector applications.
They are readily adaptable to many other fast switching RF and digital applications.
They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.
They are also available in a Surface Mount package.
• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.
0 pF @ VR = 20 V • High Reverse Voltage – to 70 Volts • Low Reverse Leakage – 200 nA (Max)
70 VOLTS HIGH–VOLTAGE SILICON HOT– CARRIER DETECTOR AND SWITCHING DIODES
1 2
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD701 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.
8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.
0 mW mW/°C °C MMBD701LT1 Value 70 Unit Volts
CASE 182– 02, STYLE 1 (TO–226AC)
2 CATHODE
1 ANODE
3 1 2
DEVICE MARKING
MMBD701LT1 = 5H
CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
3 CATHODE
1 ANODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Total Capacitance (VR = 20 V, f = 1.
0 MHz) Figure 1 Minority Carrier Lifetime (IF = 5.
0 mA, Krakauer Method) Figure 2 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.
0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT
t
Min 70 — — — — —
Typ — 0.
5 15 9.
0 0.
42 0.
7
Max — 1.
0 — 200 0.
5 1.
0
Unit Volts pF ps nAdc Vdc Vdc
IR VF VF
NOTE: MMBD701LT1 is also available in bulk packaging.
Use MMBD701L as the device title to order this device in bulk.
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