low drop IGBT
Description
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STGP10NB60S
STGP10NB60SFP- STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT
Table 1: General Features
TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S
s
Figure 1: Package
IC @100°C 10 A 10 A 10 A
1 2
VCES 600 V 600 V 600 V
VCE(sat) (Max) @25°C < 1.
7 V < 1.
7 V < 1.
7 V
3
1 2
3
s s s
HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
TO-220FP
TO-220
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
3 1
D²PAK Figure 2: Internal Schematic Diagram
APPLICATIONS LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
s
Table 2: Order Codes
SALES TYPE STGP10NB60S STGP10NB60SFP STGB10NB60ST4 MARKING GP10NB60S GP10NB60SFP GB10NB60S PACKAGE TO-220 TO-220FP D²PAK PACKAGING TUBE TUBE TAPE & REEL
Rev.
2 February 2005 1/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.
C.
(t=1sec, Tc=25°C) Storage Temperature Operating Junction Temperature 80 0.
64 -– 55 to 150 Value TO-220/D²PAK 600 20 ± 20 20 10 80 25 0.
20 2500 TO-220FP V V V A A A W W/°C V °C Unit
(1)Pulse width limited by max.
junction temperature.
Table 4: Thermal Data
Min.
Rthj-case Thermal Resistance Junction-case TO-220 D²PAK TO-220FP Rthj-amb TL Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.
6 mm from case, for 10 sec.
) 300 Typ.
Max.
1.
56 5.
0 62.
5 U...
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