(MPSA28 / MPSA29) Darlington Transistors
Description
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ON Semiconductort
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA28 80 80 12 500 625 5.
0 1.
5 12 –55 to +150 MPSA29 100 100 Unit Vdc Vdc Vdc mAdc
MPSA28 MPSA29*
*ON Semiconductor Preferred Device
1
mW mW/°C Watts mW/°C °C
2
3
CASE 29–11, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
3 Unit °C/W °C/W BASE 2
COLLECTOR 3
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICES MPSA28 MPSA29 IEBO — — — — — — 500 500 100 nAdc V(BR)CES MPSA28 MPSA29 V(BR)CBO MPSA28 MPSA29 V(BR)EBO ICBO — — — — 100 100 nAdc 80 100 12 — — — — — — Vdc nAdc 80 100 — — — — Vdc Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev.
1
Publication Order Number: MPSA28/D
MPSA28 MPSA29
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON
CHARACTERISTICS(1)
hFE 10,000 10,000 VCE(sat) — — VBE(on) — 0.
7 0.
8 1.
4 1.
2 1.
5 2.
0 Vdc — — — — Vdc —
DC Current Gain (IC = 10 mAdc, VCE = 5.
0 Vdc) (IC = 100 mAdc, VCE = 5...
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