Power Module - Toshiba Semiconductor
Description
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MP7003
TOSHIBA Power Module
MP7003
1.
Maximum Ratings (Ta = 25°C)
Diode
Characteristics Repetitive peak reverse voltage Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) Forward current Junction temperature Storage temperature range Symbol VRRM IFSM IF Tj Tstg Rating 600 220 25 150 -40~125 Unit V A A °C °C
IGBT
Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 40 80 37 150 -40~125 Unit V V A A W °C °C
All system
Characteristics Isolation voltage Symbol VISO Condition AC 1 minute Rating 2500 Unit V
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications.
Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
.
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.
).
These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or re...
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