NPN Epitaxial Silicon Transistor
Description
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FJY3014R NPN Epitaxial Silicon Transistor
November 2006
FJY3014R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.
7KΩ, R2=47KΩ) • Complement to FJY4014R
Eqivalent Circuit
C
tm
C
E
S14
B E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
50 50 10 100 -55~150 150 200
Units
V V V mA °C °C mW
TSTG TJ
PC
Storage Temperature Range Junction Temperature
Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
* Minimum land pad.
Parameter
Thermal Resistance, Junction to Ambient
Max
600
Units
°C/W
Electrical Characteristics*
Symbol
V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) R1 R1/R2
TC = 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product
Output Capacitance
Test Condition
IC = 10 uA, IE = 0 IC = 100 uA, IB = 0 VCB = 40 V, IE = 0 VCE = 5 V, IC = 5 mA IC = 10 mA, IB = 0.
5 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.
0 MHz VCE = 5 V, IC = 100uA VCE = 0.
2V, IC = 5mA
MIN
50 50
Typ
MAX
Units
V V
0.
1 68 0.
3 250 3.
7 0.
5 1.
3 3.
2 0.
09 4.
7 0.
1 6.
2 0.
11
uA
V MHz pF V V KΩ
Input Off Voltage Input On Voltage Input Resistor Resistor Ratio
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
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FJY3014R Rev.
A
FJY3014R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1.
DC current Gain
1000
Figure 2.
Input On Voltage
10
VI(on)[V], INPUT VOLTAGE
VCE = 5V R1 = 4.
7K R2 = 47K
VC...
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