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SSM6K201FE

Toshiba Semiconductor
Part Number SSM6K201FE
Manufacturer Toshiba Semiconductor
Description Power Management Switch Applications
Published Jan 30, 2007
Detailed Description www.DataSheet4U.com SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power M...
Datasheet PDF File SSM6K201FE PDF File

SSM6K201FE
SSM6K201FE

Overview
www.
DataSheet4U.
com SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power Management Switch Applications High Speed Switching Applications • • 1.
8 V drive Low ON-resistance: Ron = 186 mΩ (max) (@VGS = 1.
8V) Ron = 119 mΩ (max) (@VGS = 2.
5V) Ron = 91 mΩ (max) (@VGS = 4.
0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 2.
3 4.
6 500 150 −55~150 Unit V V A ES6 W °C °C 1, 2, 5, 6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ― ― 2-2N1A Note 1: ...


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