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SSM6K06FU

Toshiba Semiconductor
Part Number SSM6K06FU
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Jan 30, 2007
Detailed Description www.DataSheet4U.com SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switchin...
Datasheet PDF File SSM6K06FU PDF File

SSM6K06FU
SSM6K06FU

Overview
www.
DataSheet4U.
com SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications · · · Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.
5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 1.
1 2.
2 300 150 -55~150 Unit V V A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA ― ― 2-2J1D Note 1: Mounted on FR4 board.
(25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu pad: 0.
32 mm ´ 6) Figure 1.
2 TOSHIBA Wei...


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