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DF3A6.8LFE

Toshiba Semiconductor
Part Number DF3A6.8LFE
Manufacturer Toshiba Semiconductor
Description Diodes
Published Jan 12, 2007
Detailed Description www.DataSheet4U.com DF3A6.8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFE Diodes for P...
Datasheet PDF File DF3A6.8LFE PDF File

DF3A6.8LFE
DF3A6.8LFE


Overview
www.
DataSheet4U.
com DF3A6.
8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.
8LFE Diodes for Protecting Against ESD Unit: mm · Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.
Zener voltage correspond to E24 Series.
Low total capacitance: CT = 6.
0 pF (typ.
) · · Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 -55 to 125 Unit mW °C °C JEDEC JEITA TOSHIBA ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristics Zener voltage Dynamic impedance Knee dynamic impedance Rever...



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