Rectifier diodes Schottky barrier
Description
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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting package
PBYR245CT series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 2 A VF ≤ 0.
45V SOT223
DESCRIPTION
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope.
Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR245CT series is supplied in the surface mounting SOT223 package.
PINNING
PIN 1 2 3 tab anode 1 cathode anode 2 cathode
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR2 Tsp ≤ 74 ˚C square wave; δ = 0.
5; Tsp ≤ 119 ˚C square wave; δ = 0.
5; Tsp ≤ 119 ˚C t = 10 ms t = 8.
3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 40 MIN.
MAX.
40CT 40 40 40 2 2 6 6.
6 1 150 150 45CT 45 45 45 UNIT V V V A A A A A ˚C ˚C
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-a Thermal resistance junction to ambient CONDITIONS pcb mounted, minimum footprint pcb mounted, pad area as in fig:1 MIN.
TYP.
MAX.
UNIT 156 70 K/W K/W
July 1998
1
Rev 1.
400
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 1 A; Tj = 125˚C IF = 2...
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