N-Channel E nhancement Mode Field E ffect Transistor
Description
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S DP /B 55N02
S amHop Microelectronics C orp.
May,2004 ver1.
1
N-Channel E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
Max
ID
32A
R DS (on) ( m W )
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
19 @ V G S = 4.
5V
D
D
G D S
G
S
G
S DP S E R IE S TO-220
S DB S E R IE S TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 20 12 23 57 55 75 -65 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA
1
2 62.
5
C /W C /W
S DP /B 55N02
E LE CTR ICAL CHAR ACTE R IS TICS (T C = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
b
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V, V DS =0V V DS = V GS , ID = 250uA V GS = 4.
5V, ID = 21A V DS = 10V, V GS = 10V V DS = 10V, ID = 26A
Min Typ Max Unit
20 10 V uA 100 nA 0.
9 1 14 40 53 1100 600 180 1.
5 19 V
m ohm
C
4
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
C IS S C OS S CRSS
b
V DS =15V, V GS = 0V f =1.
0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
V DD = 10V, ID = 1A, V GS = 10V...
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