MICROWAVE POWER GaAs FET
Description
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM4450-16UL
TECHNICAL DATA FEATURES
nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression...
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