DatasheetsPDF.com

TIM1011-5L

Toshiba Semiconductor
Part Number TIM1011-5L
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Nov 14, 2006
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10...
Datasheet PDF File TIM1011-5L PDF File

TIM1011-5L
TIM1011-5L

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.
5dBm at 10.
7GHz to 11.
7GHz ･HIGH GAIN G1dB= 7.
0dB at 10.
7GHz to 11.
7GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 2.
0A f=10.
7 to 11.
7 GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 25.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN.
37.
0 6.
0    -42   TYP.
MAX.
37.
5  7.
0  2.
0 2.
5  ±0.
8 25  -45  4.
5 5.
5  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdo...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)