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TIM1011-2L

Toshiba Semiconductor
Part Number TIM1011-2L
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Nov 14, 2006
Detailed Description www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH...
Datasheet PDF File TIM1011-2L PDF File

TIM1011-2L
TIM1011-2L

Overview
www.
DataSheet4U.
com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.
5dBm at 10.
7GHz to 11.
7GHz „ HIGH GAIN G1dB=7.
5dB at 10.
7GHz to 11.
7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.
5   Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN.
TYP.
MAX.
UNIT 32.
5 33.
5 7.
5 0.
85 24 -45 0.
85    1.
1   1.
1 80 dBm dB A % dBc A °C f =10.
7-11.
7GHz ηadd IM3 -42   VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS...


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