VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION - Toshiba Semiconductor
Description
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MT3S41FS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S41FS
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
0.
35±0.
05 0.
15±0.
05 1.
0±0.
05 0.
8±0.
05 Unit:mm 0.
2±0.
05
FEATURES
· High Gain:|S21e| =10.
0dB (@f=2GHz)
2
0.
6±0.
05
·
Low Noise Figure :NF=1.
2dB (@f=2GHz)
1 3
0.
1±0.
05
Marking
2 3
0.
1±0.
05 2
26
1
+0.
02 0.
48 -0.
04
Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 8 4.
5 1.
5 80 40 100 150 −55~150
2
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Unit V V V mA mA mW °C °C
0.
1±0.
05 1.
BASE 2.
EMITTER 3.
COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.
0006 g 2-1E1A
Note: Device mounted on a glass-epoxy PCB(0.
88 cm ×0.
7 mm (t))
1
2003-02-14
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MT3S41FS
Microwave Characteristics (Ta = 25°C)
Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2)
2 2
Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=5mA, f=1GHz VCE=3V, IC=5mA, f=2GHz
Min 11 13.
5 8 -
Typ.
15 15.
5 10 0.
8 1.
2
Max 1.
8
Unit GHz dB dB dB dB
Noise Figure
Electrical Characteristics (Ta = 25°C)
Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=20mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ.
0.
72 0.
46 Max 1 1 140 1.
10 0.
85 Unit µA µA pF pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2
2003-02-14
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MT3S41FS
20 INSERTION GAIN |S2 1e| (dB) |S2 1e| -I C VCE=3V 15
2
15
|S2 1 e| -I C f=2GHz Ta=25 ℃
2
INSERTION GAIN |S21 e| (dB)
2
2
1...
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