TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE - Toshiba Semiconductor
Description
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MT3S36T
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S36T
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· · Low Noise Figure :NF=1.
3dB (@f=2GHz) High Gain:|S21e| =12.
5dB (@f=2GHz)
2
Marking
3
Q3
1 2
TESM JEDEC ― ― 2-1B1A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.
5 1.
5 36 18 100 150 −55~150 Unit V V V mA mA mW °C °C
JEITA TOSHIBA
Weight:0.
0022g (typ.
)
1
2002-08-19
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MT3S36T
Microwave Characteristics (Ta = 25°C)
Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2)
2 2
Test Condition VCE=3V, IC=15mA, f=2GHz VCE=3V, IC=15mA, f=1GHz VCE=3V, IC=15mA, f=2GHz VCE=3V, IC=3mA, f=1GHz VCE=3V, IC=3mA, f=2GHz
Min 15 15 10 -
Typ.
19 17.
5 12.
5 1.
1 1.
3
Max 1.
8
Unit GHz dB dB dB dB
Noise Figure
Electrical Characteristics (Ta = 25°C)
Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ.
0.
55 0.
26 Max 1 1 140 0.
85 0.
5 Unit µA µA pF pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
2
2002-08-19
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MT3S36T
|S21e| -I C INSERTION GAIN |S21e| (dB) VCE=3V 2V 1V
2
20 INSERTION GAIN |S21e| (dB)
15
|S21e| -I C VCE=3V 2V 1V
2
15
2
2
10
10
5
5 f=1GHz Ta=25 ℃ 1 10 COLLECTOR CURRENT IC (mA) 100
0
0 1
f=2GHz Ta=25 ℃ 10 COLLECTOR CURRENT I C (mA) 100
25
TRANSITION FREQUENCY fT(GHz)
fT-I C
REVERSE TRANSFER CAPACITANCE Cre(pF) OUTPUT ...
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