SILICON NPN EPITAXIAL PLANAR TYPE - Toshiba Semiconductor
Description
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MT3S08T
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S08T
VHF~UHF Band Low Noise Amplifier Applications
· · Sutable for use in an OSC Low noise figure NF = 1.
4dB |S21e|2 = 10.
5dB (@1 V/5 mA/1 GHz) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 8 1.
5 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C
JEDEC JEITA
― ― 2-1B1A g (typ.
)
Marking
3
TOSHIBA Weight:
T
1
H
2
1
2002-01-23
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DataSheet4U.
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MT3S08T
Microwave Characteristics (Ta = 25°C)
Characteristics Transition frequency Insertion gain Noise figure Symbol fT |S21e| (1) |S21e| (2) NF
2 2
Test Condition VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz
Min 2 ¾ 10.
5 ¾
Typ.
4.
5 10.
5 13.
5 1.
4
Max ¾ ¾ ¾ 2.
5
Unit GHz dB dB
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note) Min ¾ ¾ 80 ¾ Typ.
¾ ¾ ¾ 0.
55 Max 0.
1 1 140 0.
95 Unit mA mA ¾ pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device electrostatic sensitivity.
Please handle with caution.
2
2002-01-23
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DataSheet4U.
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MT3S08T
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire ...
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