N-CHANNEL POWER MOSFET
Description
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N-CHANNEL 30V - 0.
0075Ω - 60A DPAK STripFET™ II POWER MOSFET
TYPE STD60NF3LL
s s s s s
STD60NF3LL
VDSS 30V
RDS(on) <0.
0095Ω
ID 60A
TYPICAL RDS(on) = 0.
0075Ω OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.
5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
3 1
DPAK
TO-252 DESCRIPTION This application specific Power Mosfet is the third genaration of STMicroelectronics unique “Single INTERNAL SCHEMATIC DIAGRAM Feature Size ™” strip-based process.
The resulting transistor shows the best trade-off between onresistance ang gate charge.
When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and DataSheet4U.
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This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
DataShee
APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT EAS (1) Tstg Tj April 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 16 60 43 240 100 0.
67 700 – 55 to 175
(1) Starting T j=25°C, ID=30A, VDD=27.
5V
Unit V V V A A A W W/°C mJ °C
(q) Pulse width limited by safe operating area
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STD60NF3LL
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
5 100 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body ...
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