STP2NC60FP
Description
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N-CHANNEL 600V - 7Ω - 1.
9A - TO-220/TO-220FP PowerMesh™II MOSFET
TYPE STP2NC60 STP2NC60FP
s s s s s
STP2NC60 STP2NC60FP
VDSS 600 V 600 V
RDS(on) <8Ω <8Ω
ID 1.
9 A 1.
9 A
TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220
3 1 2
3 1 2
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature –60 to 150 150 1.
9 1.
2 7.
4 70 0.
56
Value STP2NC60 600 600 ±30 1.
9 (*) 1.
2 (*) 7.
4 (*) 30 0.
24 3.
5 2000 STP2NC60FP
Unit V V V A A A W W/°C V/ns V °C °C
(•)Pulse width limited by safe operating area
(1)ISD ≤1.
9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX (*) Limited only by Maximum Temperature Allowed
April 2001
1/9
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STP2NC60/STP2NC60FP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.
76 62.
5 0.
5 300 TO-220FP 4.
125 °C/W °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or No...
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