DatasheetsPDF.com

A1160

Toshiba Semiconductor
Part Number A1160
Manufacturer Toshiba Semiconductor
Description 2SA1160
Published Jul 8, 2006
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File A1160 PDF File

A1160
A1160

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.
5 A) : hFE (2) = 60 (min), 120 (typ.
) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.
5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)