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UF1606FCT

Won-Top Electronics

(UF1600FCT - UF1608FCT) 16A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER


UF1606FCT
UF1606FCT

PDF File UF1606FCT PDF File


Description
www.
DataSheet4U.
com WTE POWER SEMICONDUCTORS UF1600FCT – UF1608FCT 16A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER Features ! ! ! ! ! ! Glass Passivated Die Construction Ultra-Fast Switching High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D F P I L H B ITO-220 Dim Min Max 14.
9 15.
1 A — 10.
5 B 2.
62 2.
87 C 3.
56 4.
06 D 13.
46 14.
22 E 0.
68 0.
94 F 3.
74 Ø 3.
91 Ø G 5.
84 6.
86 H 4.
44 4.
70 I 2.
54 2.
79 J 0.
35 0.
64 K 1.
14 1.
40 L 2.
41 2.
67 P All Dimensions in mm A PIN1 2 3 Mechanical Data ! ! ! ! ! ! Case: ITO-220 Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.
24 grams (approx.
) Mounting Position: Any Marking: Type Number E PIN 1 - + PIN 2 J K PIN 3 - Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM VRWM VR VR(RMS) @TC = 105°C IO UF UF UF UF UF UF UF Unit 1600FCT 1601FCT 1602FCT 1603FCT 1604FCT 1606FCT 1608FCT 50 35 100 70 200 140 300 210 16 400 280 600 420 800 560 V V A Average Rectified Output Current 4U Non-Repetitive Peak Forward Surge Current 8.
3ms Single half sine-wave superimposed on rated load (JEDEC Method) .
co m IFSM VFM IRM trr Cj Tj, TSTG 50 80 1.
0 125 1.
3 10 500 100 50 -65 to +150 1.
7 A V µA nS pF °C Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) eet Forward Voltage @IF = 8.
0A @TA = 25°C @TA = 125°C Typical Junction Capacitance (Note 2) w.
D ata Operating and Storage Temperature Range Note: 1.
Measured with IF = 0.
5A, IR = 1.
0A, IRR = 0.
25A.
See figure 5.
2.
Measured at 1.
0 MHz and applied reverse voltage of 4.
0V D.
C.
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