Silicon PNP Power Transistor - Toshiba Semiconductor
Description
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One)
MP4305
MP4305
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
• Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation)
: PT = 4.
4 W (Ta = 25°C) • High collector current: IC (DC) = −5 A (max) • High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A) • Diode included for absorbing fly-back voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Continuous base current
Collector power dissipation (1-device operation)
Collector power dissipation (4-device operation)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
PT
Tj Tstg
−100
V
−100
V
−6
V
−5 A
−8
−0.
5
A
2.
2
W
4.
4
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-32C1E
Weight: 3.
9 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Array Configuration
R1 R2
6
7
5
8
12
1
2
3
4
9
10
11
R1 ≈ 4.
5 kΩ R2 ≈ 300 Ω
1
2006-10-27
Marking
MP4305
MP4305
JAPAN
Part No.
(or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Thermal Characteristics
Characteristics
Thermal resistance from junction to ambient (...
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