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2SK3564

Toshiba Semiconductor
Part Number 2SK3564
Manufacturer Toshiba Semiconductor
Description MOSFET
Published May 1, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK...
Datasheet PDF File 2SK3564 PDF File

2SK3564
2SK3564

Overview
( DataSheet : www.
DataSheet4U.
com ) TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 2SK3564 unit Switching Regulator Applications 10±0.
3 φ3.
2±0.
2 2.
7±0.
2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 TBD 3 4.
0 150 -55~150 A W mJ A mJ °C °C Unit 0.
69±0.
15 2.
8Max V V V 2.
54±0.
25 0.
64±0.
15 2.
54±0.
25 1 2 3 2.
6 12.
5 Min.
4.
5±0.
2 1.
1 1.
1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanc...


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