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K4F661612E

Samsung semiconductor

(K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM


Description
( DataSheet : www.DataSheet4U.com ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), p...



Samsung semiconductor

K4F661612E

PDF File K4F661612E PDF File


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