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TC59LM836DMB

Part Number	TC59LM836DMB
Manufacturer	Toshiba Semiconductor
Description	Network FCRAM
Published	Apr 17, 2006
Detailed Description	( DataSheet : www.DataSheet4U.com ) TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MO...
Datasheet	TC59LM836DMB PDF File

Overview

( DataSheet : www.
DataSheet4U.
com ) TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 2,097,152-WORDS × 4 BANKS × 36-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory.
TC59LM836DMB is Network FCRAMTM containing 301,989,888 memory cells.
TC59LM836DMB is organized as 2,097,152-words × 4 banks × 36 bits.
TC59LM836DMB feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
TC59LM836DMB can operate fast core cycle compared with regular DDR SDRAM.
TC59LM836DMB is suitabl...

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TC59LM836DMB Network FCRAM - Toshiba Semiconductor

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