CMOS NAND EPROM
Description
TC582562AXB
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION
The TC582562A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte static register ...
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