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TC58DVM92A1FT00

Part Number	TC58DVM92A1FT00
Manufacturer	Toshiba
Description	512M-Bit CMOS NAND EPROM
Published	Mar 24, 2006
Detailed Description	TC58DVM92A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM DESCR...
Datasheet	TC58DVM92A1FT00 PDF File

Overview

TC58DVM92A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM DESCRIPTION The device is a single 3.
3 V 512Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for...

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