512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
Description
IS62WV5128CLL
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns • CMOS low power operation – 1.
5 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 2.
5V--3.
6V VDD (62WV5128CLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • 2 CS Options Available
ISSI
MARCH 2003
®
DESCRIPTION
The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs.
The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62WV5128CLL is packaged in the JEDEC standard 36-pin mini BGA (6mm x 8mm).
36-pin mini BGA is available in both 1CS and 2CS options.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2 CS1 OE WE CONTROL CIRCUIT
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Copyright © 2003 Integrated Silicon Solution, Inc.
All rights reserved.
ISSI reserves the right to make changes to this specification and its products at any time without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein.
Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
— www.
issi.
com — 1-800-379-4774
1
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DataSheet4U.
com
Rev.
00B 03/13/03
IS62WV5128CLL
PIN CONFIGURATION 36-pin mini BGA (B) (6mm...
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