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2SK3310

Toshiba Semiconductor
Part Number 2SK3310
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 13, 2006
Detailed Description 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Un...
Datasheet PDF File 2SK3310 PDF File

2SK3310
2SK3310

Overview
2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance: |Yfs| = 4.
3 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement model: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single puls...


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