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2SK3316

Toshiba Semiconductor
Part Number 2SK3316
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 13, 2006
Detailed Description 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3316 Switching Regulator Applications Fa...
Datasheet PDF File 2SK3316 PDF File

2SK3316
2SK3316

Overview
2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3316 Switching Regulator Applications Fast reverse recovery time Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 60 ns (typ.
) : RDS (ON) = 1.
6 Ω (typ.
) : |Yfs| = 3.
8 S (typ.
) Unit: mm Built-in high-speed free-wheeling diode : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 −55~150 Unit V V...


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