SILICON N-CHANNEL RF POWER MOSFET
Description
MRF161
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The MRF161 is an EnhancementMode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.
0 to 400 MHz.
PACKAGE STYLE .
500 4L FLG
.
112x45° A FULL R L
S
D
Ø.
125 NOM.
C B
G
D G F
S
E
MAXIMUM RATINGS
ID VDSS VGS PDISS TJ TSTG θJC
O O
H
I J
K
900 mA
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
65 V ±40 V 17.
5 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 10 C/W
O O O O
A B C D E F G H I J K L
.
220 / 5.
59 .
125 / 3.
18 .
245 / 6.
22 .
720 / 18.
28 .
125 / 3.
18 .
970 / 24.
64 .
495 / 12.
57 .
003 / 0.
08 .
090 / 2.
29 .
150 / 3.
81
.
230 / 5.
84
.
255 / 6.
48 .
7.
30 / 18.
54
.
980 / 24.
89 .
505 / 12.
83 .
007 / 0.
18 .
110 / 2.
79 .
175 / 4.
45 .
280 / 7.
11
.
980 / 24.
89
1.
050 / 26.
67
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps η ψ
TC = 25 C
O
NONE
TEST CONDITIONS
ID = 5.
0 mA VDSS = 28 V VGS = 40 V VDS = 10 V VDS = 10 V VDS = 28 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 10 mA ID = 100 mA VGS = 0 V f = 1.
0 MHz
MINIMUM
65
TYPICAL
MAXIMUM
1.
0 1.
0
UNITS
V mA µA V mmhos
1.
0 80 7.
0 9.
7 2.
3 3.
0 11.
0 45 13.
5 50
6.
0
pF dB dB %
VDS = 28 V ID = 100 mA f = 400 MHz ZS = 67.
7+j = 14.
1 ZL = 14.
5+j = 25.
7 VDD = 28 V IDQ = 50 mA Pout = 5.
0 W
IDQ = 50 mA Pout = 5.
0 W VDD = 28 V VSWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
A
1/1
...
Similar Datasheet
