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TLN212F

Toshiba Semiconductor
Part Number TLN212F
Manufacturer Toshiba Semiconductor
Description INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
Published Jan 12, 2006
Detailed Description TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera ...
Datasheet PDF File TLN212F PDF File

TLN212F
TLN212F


Overview
TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens.
• High output • Effective emission diameter of 388 × 296µm • Optical output efficiently radiated in solid angle of 1.
136sr • Can be operated at VCC = 3V (which is equal to is two cells) TLN212(F) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current Pulse forward current Reverse voltage Operating temperature Storage temperature (Note 1) (Note 2) IF IFP VR Topr Tstg 50 800 1 −25~60 −40~90 mA mA V °C °C (Note 1): Permissible ...



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