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MP4412

Toshiba Semiconductor

N-Channel Power MOSFET - Toshiba Semiconductor


MP4412
MP4412

PDF File MP4412 PDF File



Description
MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne) MP4412 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 12 pins) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.
17 Ω (typ.
) High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 5 20 2.
2 4.
4 28 180 5 0.
22 mJ EART Tch Tstg 0.
44 150 −55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.
9 g (typ.
) W PDT EAS IAR W mJ A Single Pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range 1-device operation EAR Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25°C, L = 11.
6 mH, RG = 25 Ω, IAR = 5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-01 MP4412 Array Configuration 2 3 5 4 1 6 9 10 12 11 8 7 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.
2 mm from case for t = 10 s) TL 260 °C ΣRth (ch-c) 4.
46 °C/W Symbol Max...



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