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2SK3476

Part Number	2SK3476
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Dec 16, 2005
Detailed Description	2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Uni...
Datasheet	2SK3476 PDF File

Overview

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.
0 W (min) Gain: GP = 11.
4dB (min) Drain efficiency: ηD = 60% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C (When mounted on a 1.
6 mm glass epoxy PCB) JEDEC ― ― 2-5N1A Marking 2 Type name JEITA TOSHIBA 1 UC F ** 3 Dot Lo No.
1.
Gate 2.
Source (heat sink) 3.
Drain Caution Please take care to avoid generat...

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