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A1941

Part Number	A1941
Manufacturer	Toshiba Semiconductor
Description	2SA1941
Published	Dec 10, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High break...
Datasheet	A1941 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −140 V Collector-emitter voltage VCEO −140 V Emitter-base voltage VEBO −5 V Collector current IC −10 A Base current IB −1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuousl...

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