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TC58FVT321

Part Number	TC58FVT321
Manufacturer	Toshiba Semiconductor
Description	(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Nov 17, 2005
Detailed Description	TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BIT...
Datasheet	TC58FVT321 PDF File

Overview

TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.
0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits.
The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors.
The commands are based on the JEDEC standard.
The Program and Erase operations are automatically executed in the chip.
The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase oper...

Similar Datasheet

TC58FVT321 (TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

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