Photocoupler - Toshiba Semiconductor
Description
TOSHIBA Photocoupler IRED & Photo-Diode Array
TLP591B
Telecommunications Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers
The TOSHIBA TLP591B consists of an infrared emitting diode optically coupled to a series-connected photo-diode array in a six-lead plastic DIP package.
The TLP591B is suitable for MOS FET gate drivers.
The TLP591B has an internal shunt resistor to optimize switching speed.
• UL-recognized: UL 1577, File No.
E67349
Absolute Maximum Ratings (Ta = 25°C)
TLP591B
Unit: mm
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 25°C)
Pulse forward current (100 μs pulse, 100 pps)
IF ΔIF /°C
IFP
50
mA
TOSHIBA
11-7A9S
-0.
5
mA /°C
Weight: 0.
39 g (typ.
)
Pin Configuration (top view)
1
A
LE D
Reverse voltage Diode power dissipation
VR
3
V
PD
100
mW
Diode power dissipation derating (Ta ≥25°C)
ΔPD /°C
-1.
0
mW/°C
Junction temperature
Tj
125
°C
1
6
2
3
4
Detector
Forward current Reverse voltage Output power dissipation Junction temperature
IFD VRD PO
Tj
50
μA
10
V
0.
5
mW
125
°C
1.
: Anode(LED) 2.
: Cathode(LED) 3.
: NC 4.
: Cathode 6.
: Anode
Storage temperature range
Tstg
-55 to 125
°C
Operating temperature range
Topr
-40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 60 s, R.
H.
≤ 60 %)
(Note 1)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Device considered a two ...
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