High Voltage NPN Transistor
Description
TS13003
High Voltage NPN Transistor
TO-92
Pin Definition: 1.
Emitter 2.
Collector 3.
Base
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC 1.
5A
VCE(SAT)
1V @ IC =0.
5A, IB =0.
1A
Features
● High Voltage ● High Speed Switching
Structure
● Silicon Triple Diffused Type ● NPN Silicon Transistor
Ordering Information
Block Diagram
Part No.
Package
TS13003CT B0
TO-92
TS13003CT B0G
TO-92
TS13003CT A3
TO-92
TS13003CT A3G
TO-92
Note: “G” denote for Halogen free
Packing
1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
DC Pulse
VCBO VCEO VEBO
IC
Total Power Dissipation @ Tc= 25oC
PTOT
Operating Junction Temperature Operating Junction and Storage Temperature Range
TJ TSTG
Thermal Performance Parameter
Junction to Ambient Thermal Resistance
Symbol
RӨJA
Limit
700 400
9 1.
5 3 1.
5 +150 - 55 to +150
Limit
122
Unit
V V V
A
W oC oC
Unit
oC/W
1/5 Version: I13
TS13003
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
DC Current Gain*
Dynamic Characteristics
IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A IC / IB = 1.
5A / 0.
5A IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A VCE = 5V, IC = 10mA VCE = 10V, IC = 400mA VCE = 2V, IC = 1A
BVCBO BVCEO BVEBO
ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2
hFE
Frequency
VCE = 10V, IC = 0.
1A
Output Capacitance
VCB = 10V, f = 0.
1MHz
Resistive Load Switching Time (Ratings)
fT Cob
Delay Time
VCC = 125V, IC = 1A,
Rise Time Storage Time
IB1 = IB2 = 0.
2A, tp = 25uS
Fall Ti...
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