TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N06HD/D
™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount
Designer's
MTD20N06HD
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This...
Similar Datasheet