N-CHANNEL POWER MOSFET
Description
N-CHANNEL 20V - 0.
030 Ω - 5A SO-8 2.
7V-DRIVE STripFET™ II POWER MOSFET
TYPE STS5DNF20V
s s s
STS5DNF20V
VDSS 20 V
RDS(on) < 0.
040 Ω ( @ 4.
5 V ) < 0.
045 Ω ( @ 2.
7 V )
ID 5A
s
TYPICAL RDS(on) = 0.
030 Ω @ 4.
5 V TYPICAL RDS(on) = 0.
037 Ω @ 2.
7 V ULTRA LOW THRESHOLD GATE DRIVE (2.
7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(•) Ptot Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 12 5 3 20 1.
6 2 Unit V V V A A A W W
(•) Pulse width limited by safe operating area.
August 2002
.
1/8
STS5DNF20V
THERMAL DATA
Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Single Operation Thermal Resistance Junction-ambient Dual Operation Max.
Operating Junction Temperature Storage Temperature Max Max 62.
5 78 -55 to 150 -55 to 150 °C/W °C/W °C °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 12V Min.
20 1 10 ±100 Typ.
Max.
Unit V µA µA nA
ON (*)
Symbol VGS(th) R...
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