Silicon N-Channel IGBT - Toshiba Semiconductor
Description
MP6752
TOSHIBA GTR Module Silicon N Channel IGBT
MP6752
High Power Switching Applications Motor Control Applications
Unit in mm
· · · · ·
The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement−mode Low saturation voltage : VCE(sat) = 4.
0V (max.
) (IC = 20A) High speed: tf = 0.
35µs (max.
) (IC = 20A) trr = 0.
15µs (max.
) (IF = 20A)
JEDEC EIAJ TOSHIBA Weight: 44g
― ― 2−78A1A
Equivalent Circuit
1
2002-09-25
MP6752
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 20 40 20 40 60 150 -40~125 2500 (AC 1 minute) 1.
5 Unit V V A
Forward current
A W °C °C V N･m
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE(off) VCE(sat) Cies tr ton tf toff VF trr Rth(j-c) IF = 20A, VGE = 0 IF = 20A, VGE = -10V di / dt = 50A / µs Transistor Diode Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 20mA, VCE = 5V IC = 20A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Min.
― ― 3.
0 ― ― ― ― ― ― ― ― ― ― Typ.
― ― ― 3.
0 1300 0.
3 0.
4 0.
2 0.
5 1.
7 0.
08 ― ― Max.
±20 1.
0 6.
0 4.
0 ― 0.
6 0.
8 0.
35 1.
0 2.
5 0.
15 2.
08 3.
09 V µs °C / W µs Unit µA mA V V pF
2
2002-09-25
MP6752
3
2002-09-25
MP6752
4
2002-09-25
MP6752
5
2002-09-25
MP6752
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibilit...
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