Silicon N-Channel IGBT - Toshiba Semiconductor
Description
TOSHIBA GTR Module Silicon N Channel IGBT
MP6757
High Power Switching Applications Motor Control Applications
· The electrodes are isolated from case.
· 6 IGBTs are 6 free wheeling diodes are built into
1 package.
· Enhancement-mode · High speed : tf = 0.
35 µs (max) (IC = 25 A)
: trr = 0.
15 µs (max) (IF = 25 A)
MP6757
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Forward current
DC 1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Symbol
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
VIsol
―
JEDEC JEITA TOSHIBA Weight: 44 g (typ.
)
Rating
600 ±20 25 50 25 50
72
150 −40 to 125
2500 (AC 1 minute)
1.
5
Unit V V A
A
W °C °C V N·m
― ― 2-78A1A
1 2002-11-20
Equivalent Circuit
+
MP6757
GU (BU)
GV (BV)
GW (BW)
U V W
GX (BX)
GY (BY)
GZ (BZ)
−
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Collector cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time Forward voltage
Reverse recovery time
Thermal resistance
Symbol IGES ICES VCES
VGE (off) VCE (sat)
Cies tr
ton
tf
toff VF
trr
Rth (j-c)
Test Condition
VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 10 mA, VGE = 0 V VCE = 5 V, IC = 25 mA IC = 25 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz
15 V 0V
62 Ω −15 V
IF = 25 A, VGE = 0 V IF = 25 A, VGE = −10 V di/dt = 100 A/µs Transistor Diode
300 V
12 Ω
Min Typ.
Max Unit
― ― ±20
― ― 1.
0
600 ―
―
5.
6 ― 8.
6
― 2.
6 3.
1
― 1200 ―
µA mA V V V pF
― 0.
3 0.
6
― 0.
6 1.
0 µs
― 0.
2 0.
35
― 0.
4 0.
7 ― 2.
1 3.
2 V
― 0.
08 0.
15 µs
― ― 1.
73 °C/W
― ― 2.
35
2 2002-11-20
Collector current IC (A)
IC – VCE
50
Common emitter Tc = 25°C
20 15
40
12
30 11
20
10 VGE = 10 V
0 012345
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
...
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