Silicon N-Channel IGBT - Toshiba Semiconductor
Description
MP6759
TOSHIBA GTR Module Silicon N Channel IGBT
MP6759
Motor Control Applications High Power Switching Applications
Unit: mm
· · · · ·
The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement-mode Low saturation voltage : VCE (sat) = 2.
7 V (max) (IC = 10 A) High speed: tf = 0.
35 µs (max) (IC = 10 A)
JEDEC JEITA TOSHIBA
― ― 2-78A1A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ―
Weight: 44 g (typ.
)
Rating 600 ±20 10 20 10 20 40 150 −40 to 125 2500 (AC 1 minute) 1.
5
Unit V V A
Forward current
A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque
W °C °C V N·m
1
2002-11-20
MP6759
Equivalent Circuit
+
GU (BU)
GV (BV)
GW (BW) U V W
GX (BX) −
GY (BY)
GZ (BZ)
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance tf toff VF trr Rth (j-c) IF = 10 A, VGE = 0 V IF = 10 A, di/dt = −100 A/µs Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr 30 Ω ton 15 V 0V −15 V 100 Ω Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz Min ― ― 5 ― ― ― ― ― 300 V ― ― ― ― ― Typ.
― ― ― 2.
1 720 0.
3 0.
4 0.
2 0.
4 ― ― ― ― Max ±200 1 8 2.
7 ― ― ― µs 0.
35 ― 2.
0 200 3.
09 4.
77 V ns °C/W Unit nA mA V V pF
2
2002-11-20
MP6759
IC – VCE
20 Common emitter Tc = 25°C 16 20 16 15 13 Common emitter
VCE – VGE
(V)
Tc = −40°C 12
(A)
IC
12
Collector current
12
Collector-emitter voltage
VCE
8
8
20 4 IC = 5 A 10
4
VGE = 11 V
0 0
1
2
3
4
5
0 0
4
8
12
16
20
Collector-emitter voltage
VCE
(V)
Gate-emitter vol...
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