RF MOSFET Power Transistor
Description
an AMP
company
RF MOSFET Power 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device
Transistor,
lOOW, 28V
UF281 OOM
Operation Devices
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
pi
Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.
7 W “C “C “Ciw
PD T, T STG El JO
I4 II P
&w 505 m
t.
74 a&b, a¶
.
m4 am ooc
1 1 1
ale a?4 ace
Electrical Characteristics
I Parameter
at 25°C
( Symbol 1 Min 1 Max 1 Units 1 Test Conditions
1
Drain-Source
Breakdown Voltage
BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.
5 C RSS %
65
3.
0 3.
0
V mA pA V S pF pF pF dB % dB -
Drain-Source LeakageCurrent Gate-Source Leakage Current
I
V,,=O.
O V, I,,=150 v,,=2a.
o v,,=20 V,,=lO.
O V,,=lO.
O v,=2a.
o V,s=28.
0
mA’
v.
vo,=o.
o v v, v,,=o.
o V’ mA‘ mA, ~v,,=l .
O V, 80 ps Pulse’
Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance
* Per Side Specifications
2.
0 1.
5
6.
0 135 90 24
V, 1,,=300.
0 V, 1,,=3000.
0
v, F=l .
o MHz’ V, F=l .
O MHz’
v,,=2a.
ov, F=I .
OMHZ*
V,,=28.
0 -v,,=%.
O V,,=28.
0 v,,=28.
0 V, 1,,=600.
0 V, 1,,=600.
0 V, 1,,=600.
0 V.
1,,=600.
0 mA, P,,=lOO.
O mA, P,,=lOO.
O W.
F=500 MHz W, F=500 MHz
I
10 50 10
3O:l
mA, PO,,=1 00.
0 W, F=500 MHz mA, P,,,.
=100.
0 W, F=500 MHz
VSWR-T
-
Subject to Change Without Notice.
M/A-COM,
inc.
RF MOSFET Power Transistor,
IOOW, 28V
UF281OOM
v2.
00
Typical Broadband
Performance
Curves
EFFICIENCY
P,=lO W I,,=600
vs FREQUENCY
mA
(Push-Pull
POWER OUTPUT vs SUPPLY VOLTAGE
P,,,=lO W I,,=600 mA F=500 MHz
loo
80.
Device)
80
60
20 t 100 200 300 400 so0 14 16 20 24 28 32
FREQUENCY
(MHz)
SUPPLY VOLTAGE (V)
POWER OUTPUT vs POWER
INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
s e i3 5 fs 0
80
60 40
20
0 0 1 2 4 6 8 10 12
POWER INPUT(W)
Specifications
Subject to Change Withou...
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