Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.)
SSP70N10A
BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratin...
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