NPN Silicon Power Transistor
Description
Semiconductor
STD13007FC
NPN Silicon Power Transistor
Features
• High speed switching • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control
Ordering Information
Type NO.
STD13007FC Marking STD13007 Package Code TO-220F-3SL
Outline Dimensions
unit :
mm
PIN Connections 1.
Base 2.
Collector 3.
Emitter
KST-H028-000
1
STD13007FC
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector Power dissipation (Tc=25℃) Junction temperature Storage temperature (Tc=25℃)
Symbol
VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Rating
700 400 9 8 16 4 40 150 -55~150
Unit
V V V A A A W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage Emitter cut-off current DC Current gain
(Tc=25℃)
Symbol
BVCEO(sus) IEBO hFE*
Test Condition
IC=10mA, IB=0 VEB=9V, IC=0 IC=2A, VCE=5V IC=5A, VCE=5V IC=2A, IB=0.
4A IC=5A, IB=1A IC=8A, IB=2A
Min.
Typ.
Max.
400 8 5 14 80 1 60 30 1 2 3 1.
2 1.
6 1.
6 3 0.
7
Unit
V mA
Collector-Emitter saturation voltage
VCE(sat)*
V
Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time * Pulse test: PW≤300 ㎲, Duty cycle≤2%.
VBE(sat)* fT Cob ton tstg tf
IC=2A, IB=0.
4A IC=5A, IB=1A VCE=10V, IC=0.
5A, f=1MHz VCB=10V, IE=0, f=0.
1MHz VCC=125V, IC=5A IB1=-IB2=1A
V MHz pF
-
㎲
KST-H028-000
2
STD13007FC
Electrical Characteristic Curves
Fig.
1 PC - TC Fig.
2 VBE(sat) , VCE(sat) - IC
Fig.
3 hFE-IC
Fig.
4 tf , tstg - IC
Fig.
5 td , tr - IC
Fig.
6 Cob - VCB
KST-H028-000
3
STD13007FC
Fig.
7 Safe Operating Area
KST-H028-000
4
STD13007FC
These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.
).
Please make sure that you consult with us before you use these AUK products in equipments which require high quality an...
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