N-CHANNEL POWER MOSFET
Description
N-CHANNEL 700V - 7.
3Ω - 1.
4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET
TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1
s s s s s
STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1
VDSS 700 700 700 700 V V V V
RDS(on) < 8.
5 < 8.
5 < 8.
5 < 8.
5 Ω Ω Ω Ω
ID 1.
4 A 1.
4 A 1.
4 A 1.
4 A
Pw 50 W 25 W 45 W 45 W
1
3 2
TYPICAL RDS(on) = 7.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
TO-220
TO-220FP
3 2 1
3 1
IPAK
DPAK
DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
.
APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP2NC70Z STP2NC70ZFP STD1NC70ZT4 STD1NC70Z-1 MARKING P2NC70Z P2NC70ZFP D1NC70Z D1NC70Z PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE
February 2002
1/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP2NC70Z
Value
STP2NC70ZFP STD1NC70Z STD1NC70Z-1
Unit
VDS VDGR VGS ID ID IDM (l) PTOT IGS VESD(G-S) dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 1.
4 0.
9 5.
6 50 0.
4
700 700 ± 25 1.
4 (*) 0.
9 (*) 5.
6 (*) 25 0.
2 ± 50 2000 3 2500 -65 to 150 -65 to 150 1.
4 0.
9 5.
6 45 0.
36
V V V A A A W W/°C mA V V/ns V °C °C
(l) Pulse width limited by safe operating ...
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