Amplifier Transistors
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS8098/D
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
NPN MPS8098 MPS8099* PNP MPS8598 MPS8599*
Voltage and current are negative for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.
0 500 625 5.
0 1.
5 12 – 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.
0 Vdc mAdc mW mW/°C
1
Unit Vdc Vdc
Watts mW/°C °C
2
3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.
0 Vdc, IC = 0) (VEB = 4.
0 Vdc, IC = 0) 1.
Pulse Test: Pulse Width MPS8098, MPS8598 MPS8099, MPS8599 IEBO MPS8098, MPS8099 MPS8598, MPS8599 — — 0.
1 0.
1 V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 ICES ICBO — — 0.
1 0.
1 µAdc 6.
0 5.
0 — — — 0.
1 µAdc µAdc 60 80 — — Vdc 60 80 — — Vdc Vdc
v 300 ms, Duty Cycle = 2.
0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
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