N-CHANNEL Power MOSFET
Description
STB60NE06-16
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE STB60NE06-1
s s s s s s
V DSS 60 V
R DS(on) < 0.
016 Ω
ID 60 A
s
TYPICAL RDS(on) = 0.
013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
D2PAK TO-263 (Suffix ”T4”)
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Size™ ” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dV/dt( 1 ) T stg Tj Peak Diode Recovery voltage slope St orage Temperature Max.
Operating Junction Temperature
o o o
INTERNAL SCHEMATIC DIAGRAM
Value 60 60 ± 20 60 42 240 150 1 6 -65 to 175 175
(1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Uni t V V V A A A W W/ o C V/ ns
o o
C C
(•) Pulse width limited by safe operating area
January 1998
1/9
STB60NE06-16
THERMAL DATA
o o
R t hj-ca se
Rthj -amb
R thc- si nk Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
1 62.
5 0.
5 300
C/W C/W oC/W o C
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 25 V) Max Valu e 60 350 ...
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